Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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Barrier Layers PDF Print E-mail
Plasma Quest Ltd (PQL) have developed a process for stable, uniform, high rate deposition of good quality low temperature alumina (Al203) films. Our technology can be used to develop barrier layers suitable for use in OLED devices.
Low temperature process (deposition onto flexible)
Deposition rate up to 100nm/min.
No need for pulsed DC or feedback control (automatic or manual) of the oxygen gas flow.
Excellent thickness and optical uniformity (<1% variation across a 6" dia. substrate).
Intrinsically low stress, to permit reliable step coverage.

Plasma Quest Ltd (PQL) have developed a process for stable, uniform, high rate deposition of good quality low temperature alumina (Al203) films. Our technology can be used to develop barrier layers suitable for use in OLED devices.

  • Low temperature process (deposition onto flexible)
  • Deposition rate up to 100nm/min.
  • No need for pulsed DC or feedback control (automatic or manual) of the oxygen gas flow
  • Excellent thickness and optical uniformity (<1% variation across a 6" dia. substrate)
  • Intrinsically low stress, to permit reliable step coverage
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe