Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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Electroluminescence Devices PDF Print E-mail
Due to the excellent PL results, the ZnS:Mn films have also been incorporated into electroluminescent (EL) devices on silicon, glass and polymeric substrate materials. The standard double insulating layer structure has been adopted with the ZnS:Mn being sandwiched between two dielectric layers.
Completely transparent structures,
Various dielectric materials consisting of Y2O3, Ta2O5, Al2O3 and AlN have been investigated
No substrate heating or post deposition annealing
A turn on voltage of 122 V (RMS)
Maximum luminance of 75 Cdm-2 at approximately 195 V (RMS).
Optical transparency is 95%.
A complete, working device with a thickness of 1.8 um can be deposited in just over 30 minutes.

Due to the excellent PL results, the ZnS:Mn films have also been incorporated into electroluminescent (EL) devices on silicon, glass and polymeric substrate materials. The standard double insulating layer structure has been adopted with the ZnS:Mn being sandwiched between two dielectric layers.

  • Completely transparent structures
  • Various dielectric materials consisting of Y2O3, Ta2O5, Al2O3 and AlN have been investigated
  • No substrate heating or post deposition annealing
  • A turn on voltage of 122 V (RMS)
  • Maximum luminance of 75 Cdm-2 at approximately 195 V (RMS).
  • Optical transparency is 95%.
  • A complete, working device with a thickness of 1.8 um can be deposited in just over 30 minutes.
Attachments:
Download this file (Electroluminescence_Devices.pdf)Electroluminescence_Devices.pdf[ ]279 Kb
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe