Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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High Mobility TFTs (Thin Film Transistors) PDF Print E-mail
Plasma Quest Limited in collaboration with Cambridge University have been developing high mobility alternatives to a-Si:H TFT devices based on amorphous transparent metal-oxides.
The properties of these TFT are as follows:
Mobility ~ 10 cm2V-1S-1
Switching ratio > 106
Can be deposited into flexibles (Low temperature process)
Fully transparent options
InZnO or ZnO channel
Accurate control of the resistivity of the channel from insulating (p=3x1010?.cm) to conducting (p=3x10-3?.cm)

Plasma Quest Limited in collaboration with Cambridge University have been developing high mobility alternatives to a-Si:H TFT devices based on amorphous transparent metal-oxides.

The properties of these TFT are as follows:

  • Mobility ~ 10 cm2V-1S-1
  • Switching ratio > 106
  • Can be deposited into flexibles (Low temperature process)
  • Fully transparent options
  • InZnO or ZnO channel
  • Accurate control of the resistivity of the channel from insulating (p=3x1010?.cm) to conducting (p=3x10-3?.cm)
Attachments:
Download this file (High_Mobility_TFTs.pdf)High_Mobility_TFTs.pdf[ ]194 Kb
Download this file (Zn0_and_HfO2_summary.pdf)Zn0_and_HfO2_summary.pdf[ ]202 Kb
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe