Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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Magnetic Materials PDF Print E-mail
PQL process provides substantial improvements in the sputtering of magnetic materials, both from a production and materials point of view:
High rate deposition of magnetic materials, including CoFe, NiFe, Co, Fe.
Ability to use thick targets – 6mm normally, up to 15mm so far –high target utilisation gives less process down time and reliable run to run performance.
Close to bulk material or theoretical ideal.
Excellent adhesion deposited onto glass, silicon, oxides, plastics.
Low stress films
Grain size and thereby magnetic properties control through process modification
Our standard system has been used in multi-target mode to deposit multi-layer GMR films – the capability to repeatedly and reliably deposit identical alternating layers without recourse to thin film monitoring and absence of cross-contamination effects from prior layers has allowed rapid progression of such work.

PQL process provides substantial improvements in the sputtering of magnetic materials, both from a production and materials point of view:

  • High rate deposition of magnetic materials, including CoFe, NiFe, Co, Fe
  • Ability to use thick targets – 6mm normally, up to 15mm so far –high target utilisation gives less process down time and reliable run to run performance
  • Close to bulk material or theoretical ideal
  • Excellent adhesion deposited onto glass, silicon, oxides, plastics
  • Low stress films
  • Grain size and thereby magnetic properties control through process modification

Our standard system has been used in multi-target mode to deposit multi-layer GMR films – the capability to repeatedly and reliably deposit identical alternating layers without recourse to thin film monitoring and absence of cross-contamination effects from prior layers has allowed rapid progression of such work.

Attachments:
Download this file (Preparation_of_high_moment_CoFe.pdf)Preparation_of_high_moment_CoFe.pdf[ ]210 Kb
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe