Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

Enlarge
Photoluminescence Devices PDF Print E-mail
ZnS doped with Mn (ZnS:Mn) can be deposited onto glass and polymeric materials using no substrate heating or post deposition annealing. When excited by a UV light source the coatings are seen to emit bright photoluminescence (PL) with a peak intensity at approximately 600 nm, close to the characteristic emission of Mn phosphor.
With 0.6 wt.% Mn in the Zn target, measured PL intensities are substantially higher than those attainable using RF magnetron sputtering.
Deposition rate of 55 nm/min, over an order of magnitude faster than that attainable using conventional RF magnetron sputtering.

ZnS doped with Mn (ZnS:Mn) can be deposited onto glass and polymeric materials using no substrate heating or post deposition annealing. When excited by a UV light source the coatings are seen to emit bright photoluminescence (PL) with a peak intensity at approximately 600 nm, close to the characteristic emission of Mn phosphor.

  • With 0.6 wt.% Mn in the Zn target, measured PL intensities are substantially higher than those attainable using RF magnetron sputtering.
  • Deposition rate of 55 nm/min, over an order of magnitude faster than that attainable using conventional RF magnetron sputtering.
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe