Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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The Power of HiTUS... PDF Print E-mail

Below is a one page Image description of the PQL technology:

English - French - Italian - German - Spanish - Turkish - Portuguese - Chinese - Korean - Arabic - Japanese - Russian

The Plasma Quest Ltd HiTUS patented remotely generated plasma thin film deposition technology is a major evolution from the traditional magnetron technology widely used in industrial and research circles.

The essential factor of PQL’s leading edge thin film deposition coating technology is a remotely generated high intensity plasma that gives a number of important benefits that are unavailable from magnetron, ion beam, thermal evaporation and chemical vapour deposition coating systems. Furthermore, PQL’s thin film sputtering technology has delivered a variety of superior coating characteristics for the photonic, semiconductor, and photovoltaic sectors.

In all cases the HiTUS process delivers very high quality thin film materials with near ideal physical properties, very low stress and excellent adhesion – whether on metal, glass or plastic substrates.

Attachments:
Access this URL (http://www.plasma-quest.com/pdf/guidetohitusenglish.pdf)guidetohitusenglish.pdf[Guide to HiTUS - English - 28 pages]3037 Kb
Access this URL (http://www.plasma-quest.com/pdf/guidetohitusfrench.pdf)guidetohitusfrench.pdf[Introduction à HiTUS - Français - 28 pages]2934 Kb
Access this URL (http://www.plasma-quest.com/pdf/hituschinese.pdf)hituschinese.pdf[Introduction to HiTUS - Chinese - 10 pages]444 Kb
Access this URL (http://www.plasma-quest.com/pdf/sputterdepositioncontrolwithhitus.pdf)sputterdepositioncontrolwithhitus.pdf[Sputter Deposition Control with HiTUS]41 Kb
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe