Remotely Generated Plasma:
We have independent control of all process parameters including target voltage and ion current
Low Temperature Process:
Low temperature deposition for plastic or other 'delicate' substrates
Stable High Rate Reactive Process:
Virtual elimination of target poisoning since the surface of the target is uniformly eroded.
Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.
Potential for Multilayer Devices:
PQL systems have the ability to deposit multilayer without breaking vacuum
Thick ferromagnetic targets:
Ability to sputter from thick ferromagnetic targets
Offering enhanced adhesion performance
PQL University Initiative
A programme to solve the issue of budgetary issues / problems relating to academic institutions and universities in particular and their ability to access our advanced thin-film depostion / sputtering technology.
To provide universities/academic institutes with means to access this technology. Secondly, PQL aim to establish partnerships with universities equipped with its technology to reinforce its strategic resources for future projects to the mutual benefit of the company and its academic partners.
Offering quality syllabuses and an open policy of partnership with industry.
- A university generally does not use equipment all the time and has students and researchers.
- This means there is potential to establish an agreement between our company and the university in order to carry out our research work using the University’s machines when the university is not using them in exchange for preferential terms on our technology and related products and services.
- We pay for the consumables (machine supplies) and the University provides machines and people in order to carry out tests and research work during the time agreed by the university and Plasma Quest. The schedule is fixed annually according to the needs of the University.
- This agreement allows us to make our prices very attractive for the University (A confidentiality agreement will also be provided).
- A university/academic institution is also provided with the opportunity to integrate the HiTUS technology according to its budgetary needs on a gradual basis. The additional solution proposed by Plasma Quest is to provide our advanced technology on a *multi-year budgeting framework basis.
- *Multi-year budgeting framework basis = a progressive solution starting from providing only the launcher and adapting it onto an existing machine at the university (generally a magnetron machine), which allows the University to have nearly all the features of PQL’s technology. The machine can then be upgraded according to the agreed *multi-year budgeting framework until the machine has all the features of a complete system or the full configuration desired by the university.
This offers the university a flexible solution to pay for a technology it would not be able to have in normal circumstances.
- In addition to providing you with a solution for having this advanced technology, this solution gives an opportunity for PhD students to work on very advanced research, which gives them competitive advantages for future employment and to the university competitive advantages to develop partnerships with advanced industry increasing the notoriety of the University.
- Furthermore, the University will benefit from the network of Universities having our technology and share knowledge with them. This would enhance the University’s profile in the sector and improve its reputation further.
Please contact us using the contact form below for more information on this initiative and to discuss the potential of incorporating this at your university/academic institute.
Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr
AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO
(Oxy-Nitrides and sub-oxides are also possible with PQL technology)
Transparent conducting oxides:
Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO
Co, CoFe, Fe, NiFe