Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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Hafnia (HfO2) PDF Print E-mail
PQL's Hafnia films have recently been used to form the gate inslating layer for thin film transistors (TFT).
High dielectric constants (k=23 for HfO2) suitable for high performance devices. Breakdown >10MVcm-1
Resistivity2.5x1013?.cm
Opital transmission of full TFT device >90%.
Low temperature process

PQL's Hafnia films have recently been used to form the gate inslating layer for thin film transistors (TFT).

  • High dielectric constants (k=23 for HfO2) suitable for high performance devices. Breakdown >10MVcm-1
  • Resistivity2.5x1013?.cm
  • Opital transmission of full TFT device >90%
  • Low temperature process
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe