Our Force/Strengths

Remotely Generated Plasma:

We have independent control of all process parameters including target voltage and ion current

Low Temperature Process:

Low temperature deposition for plastic or other 'delicate' substrates

Stable High Rate Reactive Process:

Virtual elimination of target poisoning since the surface of the target is uniformly eroded.

Stress Control:

Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.

Potential for Multilayer Devices:

PQL systems have the ability to deposit multilayer without breaking vacuum

Thick ferromagnetic targets:

Ability to sputter from thick ferromagnetic targets

Substrate plasma-cleaning:

Offering enhanced adhesion performance

HiTUS in action

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Zinc Oxide (ZnO) PDF Print E-mail
Zinc oxide (ZnO) has have been identified as promising alternatives to hydrogenated amorphous silicon in thin film transistors (TFTs).
Deposition as ambient temperatures
Rate – 50nm/min
Field Effect Mobility 0.2 cm2V-1s-1

Zinc oxide (ZnO) has have been identified as promising alternatives to hydrogenated amorphous silicon in thin film transistors (TFTs).

  • Deposition as ambient temperatures
  • Rate – 50nm/min
  • Field Effect Mobility 0.2 cm2V-1s-1
Attachments:
Download this file (ZnO_and_IZO_films_for_TFT_applications.pdf)ZnO_and_IZO_films_for_TFT_applications.pdf[ ]841 Kb
 

Strategic Materials

Metals:

Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr

Dielectrics:

AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO

(Oxy-Nitrides and sub-oxides are also possible with PQL technology)

Transparent conducting oxides:

Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO

Magnetic materials:

Co, CoFe, Fe, NiFe