Remotely Generated Plasma:
We have independent control of all process parameters including target voltage and ion current
Low Temperature Process:
Low temperature deposition for plastic or other 'delicate' substrates
Stable High Rate Reactive Process:
Virtual elimination of target poisoning since the surface of the target is uniformly eroded.
Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.
Potential for Multilayer Devices:
PQL systems have the ability to deposit multilayer without breaking vacuum
Thick ferromagnetic targets:
Ability to sputter from thick ferromagnetic targets
Offering enhanced adhesion performance
Sputter Deposition Control
Once the plasma is generated in front of the target, in order to sputter material, a negative DC bias needs to be applied to the target. Without the DC bias no sputtering occurs.
The remote plasma generation in the HiTUS System offers a solution to the power constraints of magnetron sputtering, i.e. with the HiTUS System, above approximately 100V (after the initiation of sputtering) the target current saturates and there exists a pseudo-independence of target current and voltage.
The RF power applied to the RF antennae determines the target current and the target voltage determines the sheath potential. The sheath potential determines the energy of the argon ions impacting the target surface, therefore the higher the target voltage, the higher the sheath potential, the higher the energy of the argon ions hitting the target which can in turn lead to increased target material removal and therefore higher deposition rate. Hence, working at constant RF power input but by altering the target voltage we are able to increase or decrease deposition rates without altering the plasma density.
Of course, by increasing both the target current and the target voltage, high deposition rates can be achieved and on this basis, naturally, by reducing both parameters very low deposition rates are achieved.This is not possible with magnetron sputtering for very low deposition rates, as reducing the target voltage results in the plasma being extinguished.
The important bit is that for both high and low deposition rates the film properties remain the same.
To tune deposition rate is very interesting for some materials and in online multi-targets multi-layers production.
Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr
AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO
(Oxy-Nitrides and sub-oxides are also possible with PQL technology)
Transparent conducting oxides:
Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO
Co, CoFe, Fe, NiFe