Our Force/Strengths
Remotely Generated Plasma:
We have independent control of all process parameters including target voltage and ion current
Low Temperature Process:
Low temperature deposition for plastic or other 'delicate' substrates
Stable High Rate Reactive Process:
Virtual elimination of target poisoning since the surface of the target is uniformly eroded.
Stress Control:
Due to our unique process we are able to control the stress if growing thin films from compressive through to tensile.
Potential for Multilayer Devices:
PQL systems have the ability to deposit multilayer without breaking vacuum
Thick ferromagnetic targets:
Ability to sputter from thick ferromagnetic targets
Substrate plasma-cleaning:
Offering enhanced adhesion performance
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When to consider using HiTUS |
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- I need to deposit thin film that I cannot deposit with magnetron
- I need to get higher uniformity than magnetron. (Depends on substrate rotation etc)
- I need to deposit faster than magnetron included for reactive deposition and ferromagnetic materials
- I need higher target utilisation rate
- I need higher process quality process
- I need better adhesion onto the substrate
- I need to better reactive sputtering
- I need better reproducibility and this without feedback control/thin film deposition monitoring
- I need better stability during all the process deposition
- I need to conduct researches/experiments that I cannot do with magnetron
- I need very high uniformity up to 35cm wide substrate OK with linear technology
- I need very high uniformity in strip coating
- I need very low poisoning
- I need to deposit magnetic material using thick target
- I need to deposit dielectrics faster than magnetron
- I need thin film properties very near the bulk’s target material
- I need to control the stress/strain
- I need to deposit at low temperature
- If a multilayer structure is to be deposited, then it is very likely that the HiTUS technology will be less costly than if using a magnetron system. This cost effective solution is possible because PQL’s unique process can incorporate a target holder with up to six (6) targets whilst only requiring ONE target bias power supply, whereas a magnetron requires a power supply for EACH target (the availability of reliable high power switching devices for alternating between targets precludes the single power supply option). Additionally with the magnetron configuration each target also requires its own magnet set, with the associated incremental costs.
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Strategic Materials
Metals:
Ag, Al, Au, Bi, Co, Cr, Cu, Fe, Hf, In, Mg, Mn, Mo, Nb, Ni, Pb, Pt, Sn, Ta, Ti, W, Y, Zn, Zr
Dielectrics:
AlN, Al2O3, PbO, SiO2, Ta2O5, NbO5, TiO2, TixO2x-1, TiN, HfO2, CuO, In2O3, MgO
(Oxy-Nitrides and sub-oxides are also possible with PQL technology)
Transparent conducting oxides:
Sn:InO (ITO), In:ZnO(IZO), Al:ZnO (AZO), ZnO
Magnetic materials:
Co, CoFe, Fe, NiFe
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