The high density plasma generated from PQL’s HiTUS technology is capable of being directed onto the substrate prior to deposition; notably this redirection of the plasma is done without the need for substrate bias.

This ability to direct the plasma onto the substrate enables the substrate to be cleaned of volatile materials, whilst also activating the surface. As the substrate is not biased, the process gas ions (normally argon) diffuse into the substrate without any directionality, as there is no ion acceleration. This pre-cleaning and surface modification process is used to generate the excellent adhesion properties demonstrated by the technology.